PART |
Description |
Maker |
UMC3NT1 UMC3NT2 UMC5NT1G UMC3NT2G |
Dual Common Base-Collector Bias Resistor Transistors Dual Common Base−Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
NSB1010XV5T5 |
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
UMC2NT106 UMC5NT1G UMC3NT2G UMC5NT2G UMC2NT1 UMC2N |
Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
EMC5DXV5T1 |
(EMC2DXV5T1 / EMC5DXV5T1) Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
2SC4527 E000955 |
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE) NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, COVBERTER APPLICATIONS)(COMMON BASE) From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SA1608 |
High fT: fT=400MHz. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|